US Patent Issued to KIOXIA on July 28 for "Booster circuit for semiconductor memory device" (Japanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,493, issued on July 28, was assigned to KIOXIA Corp. (Tokyo).

"Booster circuit for semiconductor memory device" was invented by Takao Sueyama (Yokohama, Japan), Naohiro Matsukawa (Yokohama, Japan) and Keiko Kaneda (Chiba, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The semiconductor wiring has the N-well layer of the impurity layer in the P substrate formed in the region where the poly wiring and P substrate face each other, wherein the N-well layer is electrically floating, is not used as a circuit element, and does not input or output signals. The semiconductor wiring is used as a transmission path of a high voltage signal, and used for a...