US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 28 for "Semiconductor device structure and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,488, issued on July 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device structure and methods of forming the same" was invented by Chao-Hsuan Chen (Hsinchu, Taiwan), I-Wei Yang (Yilan, Taiwan), Shu-Yuan Ku (Hsinchu, Taiwan) and Ryan Chia-Jen Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure provide a method for forming a semiconductor device structure. The method includes forming a fin structure over a substrate, forming an insulating material adjacent the fin structure, depositing a gate dielectric layer over the fin structure and the i...