ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,342, issued on May 12, was assigned to Micron Technology Inc. (Boise, Idaho). "Methods used in forming a memory array comprising strings of ... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,343, issued on May 12, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor devices and data storage systems... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,344, issued on May 12, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Memory device and method of manufacturing memory device" was... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,345, issued on May 12, was assigned to SK hynix Inc. (Icheon, South Korea). "Method for fabricating the semiconductor memory device" was inv... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,346, issued on May 12, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Semiconductor memory device including a plurality of memory ... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,347, issued on May 12, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan). "Memory structure with reduced read disturb" was i... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,348, issued on May 12, was assigned to IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) (Seoul, South Korea). "Three... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,349, issued on May 12, was assigned to Lam Research Corp. (Fremont, Calif.). "Protection of channel layer in three-terminal vertical memory ... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,350, issued on May 12, was assigned to Kepler Computing Inc. (San Francisco). "Manganese or scandium doped ferroelectric device and bit-cell... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,351, issued on May 12, was assigned to Sony Semiconductor Solutions Corp. (Kanagawa, Japan). "Memory cell and memory cell array" was invente... Read More