US Patent Issued to Lam Research on May 12 for "Protection of channel layer in three-terminal vertical memory structure" (California, Oregon, Hawaii Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,349, issued on May 12, was assigned to Lam Research Corp. (Fremont, Calif.).

"Protection of channel layer in three-terminal vertical memory structure" was invented by John Hoang (Fremont, Calif.), Meihua Shen (Fremont, Calif.), Thorsten Bernd Lill (Kalaheo, Hawaii), Hui-Jung Wu (Pleasanton, Calif.), Aaron Lynn Routzahn (Fremont, Calif.) and Francis Sloan Roberts (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Channel material is conformally deposited along sidewalls of one or more etched features of a mold stack in fabricating a three-terminal memory device. The channel material is deposited in recessed regions and non-recessed regions...