US Patent Issued to SK hynix on May 12 for "Method for fabricating the semiconductor memory device" (South Korean Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,345, issued on May 12, was assigned to SK hynix Inc. (Icheon, South Korea).

"Method for fabricating the semiconductor memory device" was invented by Yu Jeong Lee (Icheon-si, South Korea), Dae Hwan Yun (Icheon-si, South Korea) and Gil Bok Choi (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor memory device may include the steps of: forming a stacked body on a source layer by alternately stacking a plurality of interlayer dielectric layers and a plurality of gate sacrificial layers; forming a plurality of channel holes through the stacked body, the channel holes each having a lower end exten...