US Patent Issued to SK hynix on May 12 for "Semiconductor memory device including a plurality of memory blocks and method of manufacturing the same" (South Korean Inventor)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,346, issued on May 12, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor memory device including a plurality of memory blocks and method of manufacturing the same" was invented by Jung Shik Jang (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device may include a plurality of memory blocks and at least one insulation bridge. The plurality of the memory blocks may be defined by a plurality of slits parallel to each other. The at least one insulation bridge may be formed in at least one slit located on at least one side of a memory block of the plurality of memory blocks to support the ...