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US Patent Issued to Intel on July 21 for "Gate-all-around integrated circuit structures having depopulated channel structures using directed bottom-up approach" (Oregon Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,235, issued on July 21, was assigned to Intel Corp. (Santa Clara, Calif.). "Gate-all-around integrated circuit structures having depopulate... Read More


US Patent Issued to Samsung Display on July 21 for "Display device" (South Korean Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,236, issued on July 21, was assigned to Samsung Display Co. Ltd. (Yongin-si, South Korea). "Display device" was invented by Yun Sik Joo (Go... Read More


US Patent Issued to Semiconductor Energy Laboratory on July 21 for "Oxide semiconductor film and semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,237, issued on July 21, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan). "Oxide semiconductor film and semiconduct... Read More


US Patent Issued to LONGITUDE FLASH MEMORY SOLUTIONS on July 21 for "Memory transistor with multiple charge storage layers" (American, Israeli Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,238, issued on July 21, was assigned to LONGITUDE FLASH MEMORY SOLUTIONS LTD. (Dublin). "Memory transistor with multiple charge storage lay... Read More


US Patent Issued to DB HITEK on July 21 for "Semiconductor device" (South Korean Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,239, issued on July 21, was assigned to DB HITEK Co. LTD. (Seoul, South Korea). "Semiconductor device" was invented by Hong Sik Shin (Buche... Read More


US Patent Issued to Sumitomo Chemical on July 21 for "Multilayered substrate" (Japanese Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,240, issued on July 21, was assigned to Sumitomo Chemical Co. Ltd. (Tokyo). "Multilayered substrate" was invented by Yoshinobu Narita (Hita... Read More


US Patent Issued to VANGUARD INTERNATIONAL SEMICONDUCTOR on July 21 for "Semiconductor structure and methods for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,241, issued on July 21, was assigned to VANGUARD INTERNATIONAL SEMICONDUCTOR Corp. (Hsinchu, Taiwan). "Semiconductor structure and methods ... Read More


US Patent Issued to University of Electronic Science and Technology of China on July 21 for "Voltage-sustaining layer for semiconductors" (Chinese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,242, issued on July 21, was assigned to University of Electronic Science and Technology of China (Chengdu, China). "Voltage-sustaining laye... Read More


US Patent Issued to International Business Machines on July 21 for "Stacked field-effect transistors having latch cross-coupling connections" (New York, New Hampshire, Vermont Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,243, issued on July 21, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Stacked field-effect transistors having latc... Read More


US Patent Issued to INTERNATIONAL BUSINESS MACHINES on July 21 for "Deep backside power rail cut" (New York Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,244, issued on July 21, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.). "Deep backside power rail cut" was invented b... Read More