US Patent Issued to University of Electronic Science and Technology of China on July 21 for "Voltage-sustaining layer for semiconductors" (Chinese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,242, issued on July 21, was assigned to University of Electronic Science and Technology of China (Chengdu, China).

"Voltage-sustaining layer for semiconductors" was invented by Haimeng Huang (Chengdu, China) and Xinghao Tong (Chengdu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "conductivity type, a first region doped with the first conductivity type, a second region doped with the second conductivity type, N first oxide layers and K second oxide layers. The second region is located above the second drain region. The first region is located above the drain region and at a side of the second region. The source region is located above the firs...