US Patent Issued to VANGUARD INTERNATIONAL SEMICONDUCTOR on July 21 for "Semiconductor structure and methods for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,241, issued on July 21, was assigned to VANGUARD INTERNATIONAL SEMICONDUCTOR Corp. (Hsinchu, Taiwan).

"Semiconductor structure and methods for manufacturing the same" was invented by Tse-Hsiao Liu (Hsinchu City, Taiwan), Chih-Wei Lin (Zhubei City, Taiwan), Po-Hao Chiu (Zhunan Township, Taiwan), Pi-Kuang Chuang (Hsinchu City, Taiwan) and Ching-Yi Hsu (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes providing a substrate, forming a patterned hard mask layer over the substrate, etching the patterned hard mask layer to form a hole that penetrates the patterned hard mask layer, forming a barrier portion in the hole, ...