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US Patent Issued to International Business Machines on July 28 for "Split gate contacts for vertically stacked transistors" (New York, Connecticut Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,533, issued on July 28, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Split gate contacts for vertically stacked t... Read More


US Patent Issued to Intel on July 28 for "Fabrication of gate-all-around integrated circuit structures having common metal gates and having gate dielectrics with a dipole layer" (Oregon Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,534, issued on July 28, was assigned to Intel Corp. (Santa Clara, Calif.). "Fabrication of gate-all-around integrated circuit structures ha... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on July 28 for "Semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,535, issued on July 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor device" was invented ... Read More


US Patent Issued to SAMSUNG ELECTRONICS on July 28 for "Semiconductor device, integrated circuit, and multi-valued logic device including the same" (South Korean Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,536, issued on July 28, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device, integrated circuit, an... Read More


US Patent Issued to SAMSUNG ELECTRONICS on July 28 for "Semiconductor devices comprising a lower structure, a barrier layer, and an upper structure" (South Korean Inventor)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,537, issued on July 28, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor devices comprising a lower ... Read More


US Patent Issued to GlobalFoundries U.S. on July 28 for "Structure including transistor using buried insulator layer as gate dielectric and trench isolations in source and drain" (German, American Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,538, issued on July 28, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.). "Structure including transistor using buried insulator lay... Read More


US Patent Issued to MIANYANG BOE OPTOELECTRONICS TECHNOLOGY, BOE TECHNOLOGY GROUP on July 28 for "Display substrate and display device" (Chinese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,539, issued on July 28, was assigned to MIANYANG BOE OPTOELECTRONICS TECHNOLOGY Co. Ltd. (Mianyang, China) and BOE TECHNOLOGY GROUP Co. LTD.... Read More


US Patent Issued to Hefei BOE Joint Technology, BOE Technology Group on July 28 for "Array substrate, display panel, and display device" (Chinese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,540, issued on July 28, was assigned to Hefei BOE Joint Technology Co. Ltd. (Hefei, China) and BOE Technology Group Co. Ltd. (Beijing). "Ar... Read More


US Patent Issued to LG Display on July 28 for "Display device including main and redundancy light emitting diodes" (South Korean Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,541, issued on July 28, was assigned to LG Display Co. Ltd. (Seoul, South Korea). "Display device including main and redundancy light emitt... Read More


US Patent Issued to WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY on July 28 for "Display panel" (Chinese Inventor)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,542, issued on July 28, was assigned to WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY Co. LTD. (Wuhan, China). "Display... Read More