ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,535, issued on July 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor device" was invented by Cheng-I Lin (Hsinchu, Taiwan), Chun-Heng Chen (Hsinchu City, Taiwan), Ming-Ho Lin (Taipei City, Taiwan) and Chi-On Chui (Hsinchu City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes at least one fin, a first dielectric layer and a second dielectric layer. The first dielectric layer is disposed on the at least one fin. The second dielectric layer between the at least one fin and the first dielectric layer. A thickness of the first dielectric layer on a sidewall of the at l...