US Patent Issued to International Business Machines on July 28 for "Split gate contacts for vertically stacked transistors" (New York, Connecticut Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,533, issued on July 28, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Split gate contacts for vertically stacked transistors" was invented by Utkarsh Bajpai (Delmar, N.Y.), James P Mazza (Saratoga Springs, N.Y.), Shahrukh Khan (Sandy Hook, Conn.), Biswanath Senapati (Mechanicville, N.Y.) and Nicholas Anthony Lanzillo (Wynantskill, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices and methods of forming the same include a top transistor that includes a first channel and a first gate. A bottom transistor includes a second channel and a second gate that has a top surface at a same height as a top surface...