US Patent Issued to SAMSUNG ELECTRONICS on July 28 for "Semiconductor devices comprising a lower structure, a barrier layer, and an upper structure" (South Korean Inventor)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,537, issued on July 28, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Semiconductor devices comprising a lower structure, a barrier layer, and an upper structure" was invented by Jinbum Kim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a lower structure; a barrier layer on the lower structure; and an upper structure on the barrier layer, wherein the lower structure includes lower source/drain regions; lower active layers spaced apart from each other, between the lower source/drain regions; and a lower gate structure and including portions below each of the lower acti...