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US Patent Issued to Mitsubishi Electric on July 21 for "Manufacturing method for semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,210, issued on July 21, was assigned to Mitsubishi Electric Corp. (Tokyo). "Manufacturing method for semiconductor device" was invented by ... और पढ़ें


US Patent Issued on July 21 for "Semiconductor optoelectronic integrated circuit and methodology for making same employing gate-all-around epitaxial structures" (New Hampshire Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,212, issued on July 21. "Semiconductor optoelectronic integrated circuit and methodology for making same employing gate-all-around epitaxia... और पढ़ें


US Patent Issued to Taiwan Semiconductor Manufacturing on July 21 for "FinFETs with low source/drain contact resistance" (Taiwanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,213, issued on July 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-chu, Taiwan). "FinFETs with low source/drain cont... और पढ़ें


US Patent Issued to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on July 21 for "Semiconductor device with spacer and C-shaped channel portion, method of manufacturing semiconductor device with spacer and C-shaped channel portion, and electronic apparatus" (New York Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,214, issued on July 21, was assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing). "Semiconductor device with sp... और पढ़ें


US Patent Issued to Taiwan Semiconductor Manufacturing on July 21 for "Field effect transistor with gate isolation structure and method" (Taiwanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,215, issued on July 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Field effect transistor with gate i... और पढ़ें


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 21 for "Structure and formation method of semiconductor device with semiconductor nanostructures" (Taiwanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,216, issued on July 21, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Structure and formation method ... और पढ़ें


US Patent Issued to ROHM on July 21 for "Group III nitride semiconductor device with first and second conductive layers" (Japanese Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,217, issued on July 21, was assigned to ROHM Co. LTD. (Kyoto, Japan). "Group III nitride semiconductor device with first and second conduct... और पढ़ें


US Patent Issued to ENKRIS SEMICONDUCTOR on July 21 for "Semiconductor structures and manufacturing methods thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,218, issued on July 21, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China). "Semiconductor structures and manufacturing methods ther... और पढ़ें


US Patent Issued to ENKRIS SEMICONDUCTOR on July 21 for "Semiconductor structure comprising a channel layer, a barrier layer, and a P-type semiconductor layer, and manufacturing method having the same thereof" (Chinese Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,220, issued on July 21, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China). "Semiconductor structure comprising a channel layer, a b... और पढ़ें


US Patent Issued to ENKRIS SEMICONDUCTOR on July 21 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,221, issued on July 21, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China). "Semiconductor structure and manufacturing method thereo... और पढ़ें