ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,251, issued on July 21, was assigned to Adeia Semiconductor Solutions LLC (San Jose, Calif.). "Method of forming nanosheet field effect tra... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,252, issued on July 21, was assigned to NXP USA INC. (Austin, Texas). "Transistor gate structure with insulating layer and method of fabric... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,253, issued on July 21, was assigned to STMICROELECTRONICS (ROUSSET) SAS (Rousset, France). "Electronic device comprising transistors" was ... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,254, issued on July 21, was assigned to MACOM TECHNOLOGY SOLUTIONS HOLDINGS INC. (Lowell, Mass.). "Metal pillar connection topologies for h... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,255, issued on July 21, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor device sidewall of the gate... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,256, issued on July 21, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device with capping layer and meth... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,257, issued on July 21, was assigned to Intel Corp. (Santa Clara, Calif.). "Stacked source or drain contact flyover" was invented by Sukru ... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,258, issued on July 21, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan). "Dipole patterning for CMOS devices"... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,259, issued on July 21, was assigned to Tokyo Electron Ltd. (Tokyo). "Device and method of forming 3D U-shaped nanosheet cfet" was invented... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,260, issued on July 21, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan). "Leakage reduction methods and struc... Read More