ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,411, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Phase change material switch with o... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,412, issued on Sept. 8, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Metal ferroelectric insulator metal stack in... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,413, issued on Sept. 8, was assigned to BOE TECHNOLOGY GROUP Co. LTD. (Beijing). "Method for manufacturing a nanowire using an inducing par... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,414, issued on Sept. 8, was assigned to Tokyo Electron Ltd. (Tokyo). "Method for semiconductor processing" was invented by Hunter Frost (Al... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,415, issued on Sept. 8, was assigned to Tokyo Electron Ltd. (Tokyo) and University of Yamanashi (Kofu, Japan). "Film forming method and fil... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,416, issued on Sept. 8, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Sin gap fill via nucleation inhibition" was invented... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,417, issued on Sept. 8, was assigned to Renesas Electronics Corp. (Tokyo). "Method of manufacturing semiconductor device" was invented by Y... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,418, issued on Sept. 8, was assigned to Tokyo Electron Ltd. (Tokyo). "Substrate processing method and substrate processing apparatus" was i... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,419, issued on Sept. 8, was assigned to Tokyo Electron Ltd. (Tokyo). "Substrate processing method and substrate processing apparatus" was i... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,420, issued on Sept. 8, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Methods of selectively etching silicon nitride" was ... Read More