US Patent Issued to Applied Materials on Sept. 8 for "Sin gap fill via nucleation inhibition" (California Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,416, issued on Sept. 8, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Sin gap fill via nucleation inhibition" was invented by Zeqing Shen (San Jose, Calif.), Supriya Ghosh (San Jose, Calif.), Susmit Singha Roy (Campbell, Calif.) and Abhijit B. Mallick (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure generally relates to methods for forming silicon nitride layers and silicon nitride structures on substrates. In an embodiment, the method includes positioning a substrate having at least one feature thereon in a process chamber; depositing a first silicon layer on the substrate and the at least one ...