US Patent Issued to Renesas Electronics on Sept. 8 for "Method of manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,417, issued on Sept. 8, was assigned to Renesas Electronics Corp. (Tokyo).

"Method of manufacturing semiconductor device" was invented by Yanzhe Wang (Tokyo) and Sho Nakanishi (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor substrate exposed from an oxidation-resistant mask layer is thermally oxidized to form a field oxidation film. The mask layer has multiple mask parts with a first width and multiple mask parts with a second width smaller than the first width. In the thermal oxidation process, an oxidation film is formed integrally with the field oxidation film under the mask part, and an oxidation film is formed integrally w...