ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,001, issued on June 23, was assigned to RESONAC HARD DISK Corp. (Ichihara, Japan). "Recording and reproducing device including a plurality ... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,002, issued on June 23, was assigned to Dell Products LP (Round Rock, Texas). "Information handling system drive system having an integrate... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,003, issued on June 23, was assigned to ELECTRONICS and TELECOMMUNICATIONS RESEARCH INSTITUTE (Daejeon, South Korea). "Reference voltage ca... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,004, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Sensing circuit of memory device an... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,005, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Storage device performing dummy read oper... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,006, issued on June 23, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Stop read go settings for low suspend latency applic... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,007, issued on June 23, was assigned to EM MICROELECTRONIC-MARIN SA (Marin, Switzerland). "Address decoder unit for a memory cell array usi... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,008, issued on June 23, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "MRAM layout" was invented by Wen-Liang Huan... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,009, issued on June 23, was assigned to SK HYNIX INC. (Icheon-si, South Korea). "Memory device and operating method thereof" was invented b... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,010, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Magnetoresistive random-access memo... Read More