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US Patent Issued on July 14 for "Composite hybrid inductive layered electric generator" (California Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,021, issued on July 14. "Composite hybrid inductive layered electric generator" was invented by Richard Adams (Grass Valley, Calif.). Acco... Read More


US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES on July 14 for "Piezoresistive transducer device with upper face that is intergrally exposed or only covered with an electrical connecting element" (French Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,022, issued on July 14, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris). "Piezoresistive transducer ... Read More


US Patent Issued to XI'AN JIAOTONG UNIVERSITY on July 14 for "Preparation method for piezoelectric composite material, and application thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,023, issued on July 14, was assigned to XI'AN JIAOTONG UNIVERSITY (Xi'an, China). "Preparation method for piezoelectric composite material,... Read More


US Patent Issued to Sumitomo Chemical on July 14 for "Piezoelectric stack, piezoelectric element, and method of manufacturing piezoelectric stack" (Japanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,024, issued on July 14, was assigned to Sumitomo Chemical Co. Ltd. (Tokyo). "Piezoelectric stack, piezoelectric element, and method of manu... Read More


US Patent Issued to UNITED MICROELECTRONICS on July 14 for "Manufacturing method of memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,025, issued on July 14, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Manufacturing method of memory device" was ... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 14 for "Method for forming a MAMR structure based on a TMR-Spin Torque oscillator (STO) having seed layer and capping layer of metal oxide" (California Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,026, issued on July 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Method for forming a MAMR struc... Read More


US Patent Issued to INTERNATIONAL BUSINESS MACHINES on July 14 for "MRAM structure with raised edge of tunnel barrier layer" (New York Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,027, issued on July 14, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.). "MRAM structure with raised edge of tunnel ba... Read More


US Patent Issued to Western Digital Technologies on July 14 for "Buffer layers, interlayers, and barrier layers comprising Heusler alloys for SOT based sensor, memory, and storage devices" (American, Japanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,028, issued on July 14, was assigned to Western Digital Technologies Inc. (San Jose, Calif.). "Buffer layers, interlayers, and barrier laye... Read More


US Patent Issued to SAMSUNG ELECTRONICS on July 14 for "Magnetic memory device with diffusion barrier" (South Korean Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,030, issued on July 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Magnetic memory device with diffusion barrie... Read More


US Patent Issued to MELEXIS TECHNOLOGIES on July 14 for "Magnetic sensor device, and method of producing same" (Belgian Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,031, issued on July 14, was assigned to MELEXIS TECHNOLOGIES SA (Bevaix, Switzerland). "Magnetic sensor device, and method of producing sam... Read More