US Patent Issued to SAMSUNG ELECTRONICS on July 14 for "Magnetic memory device with diffusion barrier" (South Korean Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,030, issued on July 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Magnetic memory device with diffusion barrier" was invented by Joonmyoung Lee (Gwacheon-si, South Korea), Whankyun Kim (Seoul, South Korea), Eunsun Noh (Yongin-si, South Korea), Junho Jeong (Hwaseong-si, South Korea) and Youngjun Cho (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic memory device includes a pinned magnetic pattern, a tunnel barrier pattern, a free magnetic pattern, a diffusion barrier pattern, a non-magnetic pattern and a capping pattern, which are sequentially stacked on a substrate. The diffusion barrier...