US Patent Issued to UNITED MICROELECTRONICS on July 14 for "Manufacturing method of memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,025, issued on July 14, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"Manufacturing method of memory device" was invented by Chih-Wei Kuo (Tainan City, Taiwan) and Chung-Yi Chiu (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing method of a memory device includes following steps. Memory units are formed on a substrate. Each memory unit includes a first electrode, a second electrode disposed above the first electrode in a vertical direction, and a memory material layer disposed between the first electrode and the second electrode. A conformal spacer layer is formed on the memory units. A non-...