US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 14 for "Method for forming a MAMR structure based on a TMR-Spin Torque oscillator (STO) having seed layer and capping layer of metal oxide" (California Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,026, issued on July 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for forming a MAMR structure based on a TMR-Spin Torque oscillator (STO) having seed layer and capping layer of metal oxide" was invented by Huanlong Liu (San Jose, Calif.), Jian Zhu (San Jose, Calif.), Keyu Pi (San Jose, Calif.) and Ru-Ying Tong (Los Gatos, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a MTJ with a tunnel barrier having a high tunneling magnetoresistance ratio, and low resistance x area value is disclosed. The method preserves perpendicular magnetic anisotropy in bottom and top magnetic laye...