US Patent Issued to STMicroelectronics on Oct. 27 for "Row decoder circuit and corresponding method of operation" (Italian Inventors)

Posted On: 2026-10-27

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,372, issued on Oct. 27, was assigned to STMicroelectronics S.r.l. (Agrate Brianza, Italy). "Row decoder circuit and corresponding method of... Read More

US Patent Issued to Yangtze Memory Technologies on Oct. 27 for "Managing program time in memory devices" (Chinese Inventors)

Posted On: 2026-10-27

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ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,373, issued on Oct. 27, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Managing program time in memory devices" was ... Read More

US Patent Issued to Micron Technology on Oct. 27 for "Selection of an optimal single level cell programming scheme" (California, Idaho Inventors)

Posted On: 2026-10-27

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ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,374, issued on Oct. 27, was assigned to Micron Technology Inc. (Boise, Idaho). "Selection of an optimal single level cell programming schem... Read More

US Patent Issued to Yangtze Memory Technologies on Oct. 27 for "Memory device and operating method thereof, and memory system" (Chinese Inventors)

Posted On: 2026-10-27

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ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,375, issued on Oct. 27, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Memory device and operating method thereof, a... Read More

US Patent Issued to MACRONIX INTERNATIONAL on Oct. 27 for "Memory device and pre-charge method" (Taiwanese Inventors)

Posted On: 2026-10-27

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ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,376, issued on Oct. 27, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan). "Memory device and pre-charge method" was invent... Read More

US Patent Issued to Sandisk Technologies on Oct. 27 for "Enhanced independent bit scan mode for neighbor plane disturb detection for memory devices" (Chinese Inventors)

Posted On: 2026-10-27

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ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,377, issued on Oct. 27, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Enhanced independent bit scan mode for neighbor plan... Read More

US Patent Issued to Micron Technology on Oct. 27 for "Memory configured to resume a suspended erase operation with a variable erase voltage" (Singaporean, American Inventors)

Posted On: 2026-10-27

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ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,378, issued on Oct. 27, was assigned to Micron Technology Inc. (Boise, Idaho). "Memory configured to resume a suspended erase operation wit... Read More

US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Oct. 27 for "Memory devices and program operations having adjusted prepulse thereof" (Chinese Inventors)

Posted On: 2026-10-27

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ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,379, issued on Oct. 27, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China). "Memory devices and program operations having ... Read More

US Patent Issued to Sandisk Technologies on Oct. 27 for "Managing erase fails due to single defective word line" (California Inventor)

Posted On: 2026-10-27

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ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,380, issued on Oct. 27, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Managing erase fails due to single defective word li... Read More

US Patent Issued to Sandisk Technologies on Oct. 27 for "Program time improvement for NAND die with coarse bitscan during program-verify" (Japanese, American, Indian Inventors)

Posted On: 2026-10-27

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ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,381, issued on Oct. 27, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Program time improvement for NAND die with coarse bi... Read More

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US Patent Issued to STMicroelectronics on Oct. 27 for "Row decoder circuit and corresponding method of operation" (Italian Inventors)

US Patent Issued to Yangtze Memory Technologies on Oct. 27 for "Managing program time in memory devices" (Chinese Inventors)

US Patent Issued to Micron Technology on Oct. 27 for "Selection of an optimal single level cell programming scheme" (California, Idaho Inventors)

US Patent Issued to Yangtze Memory Technologies on Oct. 27 for "Memory device and operating method thereof, and memory system" (Chinese Inventors)

US Patent Issued to MACRONIX INTERNATIONAL on Oct. 27 for "Memory device and pre-charge method" (Taiwanese Inventors)

US Patent Issued to Sandisk Technologies on Oct. 27 for "Enhanced independent bit scan mode for neighbor plane disturb detection for memory devices" (Chinese Inventors)

US Patent Issued to Micron Technology on Oct. 27 for "Memory configured to resume a suspended erase operation with a variable erase voltage" (Singaporean, American Inventors)

US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Oct. 27 for "Memory devices and program operations having adjusted prepulse thereof" (Chinese Inventors)

US Patent Issued to Sandisk Technologies on Oct. 27 for "Managing erase fails due to single defective word line" (California Inventor)

US Patent Issued to Sandisk Technologies on Oct. 27 for "Program time improvement for NAND die with coarse bitscan during program-verify" (Japanese, American, Indian Inventors)