ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,381, issued on Oct. 27, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).
"Program time improvement for NAND die with coarse bitscan during program-verify" was invented by Ancha Harihara Sravan (Bangalore, India), Yosuke Kato (Yokohama, Japan), Henry Chin (Fremont, Calif.) and Erika Penzo (San Jose, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory apparatus is provided and includes memory cells configured to retain a threshold voltage corresponding to data states. The memory cells are disposed in memory holes each connected to bit lines. Each of the bit lines is coupled to one of a plurality of sense amplifiers arranged in ...