US Patent Issued to Micron Technology on Oct. 27 for "Memory configured to resume a suspended erase operation with a variable erase voltage" (Singaporean, American Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,378, issued on Oct. 27, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory configured to resume a suspended erase operation with a variable erase voltage" was invented by Kannan Abinaya (Singapore), Shyam Sunder Raghunathan (Singapore) and Dheeraj Srinivasan (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Memories might include an array of memory cells having a plurality of strings of series-connected memory cells and a controller configured to cause to memory to apply an erase pulse having a target voltage level and having an erase pulse flattop; for each suspend of a plurality of suspends initiated during the applicati...