US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Oct. 27 for "Memory devices and program operations having adjusted prepulse thereof" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,379, issued on Oct. 27, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory devices and program operations having adjusted prepulse thereof" was invented by Xufeng Zhou (Wuhan, China), Zhipeng Dong (Wuhan, China) and Ke Liang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides memory devices, memory systems, and methods for operating a memory device. In certain aspects, a disclosed memory device comprises memory strings each comprising a drain select gate (DSG) transistor, memory cells, and a source select gate (SSG) transistor, the method comprising: programming a first memory cell o...