ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,923, issued on April 7, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris) and SOITEC (Bernin, France). ... और पढ़ें
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,924, issued on April 7, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris), CENTRE NATIONAL DE LA RECHER... और पढ़ें
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,925, issued on April 7, was assigned to Lam Research Corp. (Fremont, Calif.). "Non-metal incorporation in molybdenum on dielectric surfaces... और पढ़ें
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,926, issued on April 7, was assigned to Tokyo Electron Ltd. (Tokyo). "Method of forming conductive member and method of forming channel" wa... और पढ़ें
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,927, issued on April 7, was assigned to The Government of the United States of America, as represented by the Secretary of the Navy (Arlingt... और पढ़ें
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,928, issued on April 7, was assigned to ASM IP Holding B.V. (Almere, Netherlands). "Apparatus and methods for selectively etching silicon o... और पढ़ें
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,929, issued on April 7, was assigned to Lam Research Corp. (Fremont, Calif.). "Atomic layer etching of molybdenum" was invented by Andreas ... और पढ़ें
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,930, issued on April 7, was assigned to Lam Research Corp. (Fremont, Calif.). "Conformal thermal CVD with controlled film properties and hi... और पढ़ें
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,931, issued on April 7, was assigned to WINBOND ELECTRONICS CORP. (Taichung City, Taiwan). "Semiconductor structure and method for forming ... और पढ़ें
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,932, issued on April 7, was assigned to Tokyo Electron Ltd. (Tokyo). "Methods and structures for improving etch profile of underlying layer... और पढ़ें