US Patent Issued to The Government of the United States of America, as represented by the Secretary of the Navy on April 7 for "Methods of forming semiconductor devices including self-aligned p-type and n-type doped regions" (Maryland, Tennessee, Virginia Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,927, issued on April 7, was assigned to The Government of the United States of America, as represented by the Secretary of the Navy (Arlington, Va.).

"Methods of forming semiconductor devices including self-aligned p-type and n-type doped regions" was invented by Francis J. Kub (Arnold, Md.), Travis J. Anderson (Alexandria, Va.), Mona A. Ebrish (Nashville, Tenn.), Alan G. Jacobs (Rockville, Md.) and Karl D. Hobart (Alexandria, Va.).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to some embodiments of the present disclosure, methods of forming a semiconductor device on a semiconductor layer having opposing first and second surfaces are discl...