US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, SOITEC on April 7 for "Method for producing a semiconductor structure comprising an interface region including agglomerates" (French Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,923, issued on April 7, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris) and SOITEC (Bernin, France).

"Method for producing a semiconductor structure comprising an interface region including agglomerates" was invented by Gweltaz Gaudin (Crolles, France), Ionut Radu (Bernin, France), Franck Fournel (Grenoble Cedex, France), Julie Widiez (Grenoble Cedex, France) and Didier Landru (Le Champ-pres-Froges, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for producing a semiconductor structure comprises: a) providing a working layer of a semiconductor material; b) providing a carrier substrate of a semic...