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US Patent Issued to NANYA TECHNOLOGY on Oct. 6 for "Semiconductor device with catalytic conductive layer and method for fabricating the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,693, issued on Oct. 6, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device with catalytic conductive lay... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 6 for "Isolation structures and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,694, issued on Oct. 6, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Isolation structures and methods of f... Read More


US Patent Issued to NANYA TECHNOLOGY on Oct. 6 for "Method for fabricating semiconductor device with protection liner for bit line" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,695, issued on Oct. 6, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Method for fabricating semiconductor device with p... Read More


US Patent Issued to SEMICONDUCTOR COMPONENTS INDUSTRIES on Oct. 6 for "Semiconductor packages with wettable flanks and related methods" (Malaysian, American Inventors)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,696, issued on Oct. 6, was assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES LLC (Scottsdale, Ariz.). "Semiconductor packages with wettable fl... Read More


US Patent Issued to Tokyo Electron on Oct. 6 for "Substrate liquid processing method, and recording medium" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,697, issued on Oct. 6, was assigned to Tokyo Electron Ltd. (Tokyo). "Substrate liquid processing method, and recording medium" was invented ... Read More


US Patent Issued to Applied Materials on Oct. 6 for "Method for gapfill" (California Inventors)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,698, issued on Oct. 6, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Method for gapfill" was invented by Yi Xu (San Jose, C... Read More


US Patent Issued to NANYA TECHNOLOGY on Oct. 6 for "Semiconductor memory device manufacturing method" (Taiwanese Inventor)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,699, issued on Oct. 6, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor memory device manufacturing method" ... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 6 for "Area selective deposition for zero via enclosure and extremely small metal line end space" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,700, issued on Oct. 6, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Area selective deposition for zer... Read More


US Patent Issued to Tokyo Electron on Oct. 6 for "Catalyst-enhanced chemical vapor deposition" (American, Japanese Inventors)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,701, issued on Oct. 6, was assigned to Tokyo Electron Ltd. (Tokyo). "Catalyst-enhanced chemical vapor deposition" was invented by Kai-Hung Y... Read More


US Patent Issued to International Business Machines on Oct. 6 for "Asymmetric skip-level via structure" (New York Inventors)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,702, issued on Oct. 6, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Asymmetric skip-level via structure" was inven... Read More