US Patent Issued to NANYA TECHNOLOGY on Oct. 6 for "Method for fabricating semiconductor device with protection liner for bit line" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,695, issued on Oct. 6, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Method for fabricating semiconductor device with protection liner for bit line" was invented by Huan-Yung Yeh (Taoyuan City, Taiwan) and Chun-Chi Lai (Taoyuan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device includes forming a trench extending from a top surface of a semiconductor substrate into the semiconductor substrate, and forming a gate dielectric layer lining the trench. The method also includes forming a gate electrode layer in the trench and over the top surface of the semiconductor substrate, a...