US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 6 for "Isolation structures and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,694, issued on Oct. 6, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Isolation structures and methods of forming the same" was invented by Shih-Wei Lin (Taipei City, Taiwan), Hau-Yan Lu (Hsinchu City, Taiwan) and Te-Hsien Hsieh (Kaohsiung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Depositing an oxide material on sidewalls of trenches between etching cycles allows narrower trenches to be etched to increased depths without causing over-etching of wider trenches. As a result, efficiency of a device including the trenches (e.g., a silicon photonics (SiPh) device or a pixel device, among other examples) i...