US Patent Issued to NANYA TECHNOLOGY on Oct. 6 for "Semiconductor device with catalytic conductive layer and method for fabricating the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,693, issued on Oct. 6, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Semiconductor device with catalytic conductive layer and method for fabricating the same" was invented by Wei-Yu Chen (Houlong Twonship, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; an indentation inwardly positioned in the substrate and including a bottom surface and two sidewalls; a catalytic conductive layer positioned on the bottom surface of the indentation. The bottom surface of the indentat...