US Patent Issued to Renesas Electronics on June 9 for "Semiconductor device and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,814, issued on June 9, was assigned to Renesas Electronics Corp. (Tokyo). "Semiconductor device and method of manufacturing the same" was in... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 9 for "Method for forming semiconductor device structure with oxide structure" (Taiwanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,815, issued on June 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Method for forming semiconductor ... Read More

US Patent Issued to SAMSUNG ELECTRONICS on June 9 for "Method for fabricating semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,816, issued on June 9, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-Si, South Korea). "Method for fabricating semiconductor device" w... Read More

US Patent Issued to SAMSUNG ELECTRONICS on June 9 for "Semiconductor device and method of fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,817, issued on June 9, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device and method of fabricating... Read More

US Patent Issued to GUANGDONG ZHINENG TECHNOLOGIES on June 9 for "Nitride semiconductor device" (Chinese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,819, issued on June 9, was assigned to GUANGDONG ZHINENG TECHNOLOGIES Co. LTD. (Guangzhou, China). "Nitride semiconductor device" was invent... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 9 for "Backside contact" (Taiwanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,820, issued on June 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan). "Backside contact" was invented by Li-... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on June 9 for "Connector via structures for nanostructures and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,821, issued on June 9, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Connector via structures for nanostru... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 9 for "Void-free conductive contact formation" (Taiwanese, American Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,822, issued on June 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Void-free conductive contact form... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 9 for "Semiconductor structure" (Taiwanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,823, issued on June 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan). "Semiconductor structure" was invented... Read More

US Patent Issued to FUJI ELECTRIC on June 9 for "Insulated gate semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,824, issued on June 9, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan). "Insulated gate semiconductor device" was invented by Syunk... Read More

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