US Patent Issued to FUJI ELECTRIC on June 9 for "Insulated gate semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,824, issued on June 9, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).

"Insulated gate semiconductor device" was invented by Syunki Narita (Matsumoto-city, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An insulated gate semiconductor device includes: a carrier transport layer of a first conductivity-type; an injection control region of a second conductivity-type; a carrier supply region of the first conductivity-type provided at an upper part of the injection control region; a base contact region of the second conductivity-type provided at an upper part of the injection control region; trenches penetrating the injection control regio...