ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,819, issued on June 9, was assigned to GUANGDONG ZHINENG TECHNOLOGIES Co. LTD. (Guangzhou, China).
"Nitride semiconductor device" was invented by Zilan Li (Guangzhou, China) and Shuxin Zhang (Guangzhou, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention relates to a semiconductor device, including: a first channel layer, which includes a first channel region, a first gate doped region, and a second channel region, where the second channel region is located above the first channel region, and the first gate doped region is located between the first channel region and the second channel region; a first barrier layer, where a fir...