US Patent Issued to Renesas Electronics on May 26 for "Semiconductor device and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,820, issued on May 26, was assigned to Renesas Electronics Corp. (Tokyo). "Semiconductor device and method of manufacturing the same" was in... Read More

US Patent Issued to POWER INTEGRATIONS on May 26 for "Vertical field effect transistor device and method of fabrication" (New York Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,821, issued on May 26, was assigned to POWER INTEGRATIONS INC. (San Jose, Calif.). "Vertical field effect transistor device and method of fa... Read More

US Patent Issued to Wolfspeed on May 26 for "Power devices with a hybrid gate structure" (North Carolina Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,822, issued on May 26, was assigned to Wolfspeed Inc. (Durham, N.C.). "Power devices with a hybrid gate structure" was invented by Daniel Je... Read More

US Patent Issued to ROBERT BOSCH on May 26 for "Semiconductor component and method for manufacturing a semiconductor component" (German Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,823, issued on May 26, was assigned to ROBERT BOSCH GMBH (Stuttgart, Germany). "Semiconductor component and method for manufacturing a semic... Read More

US Patent Issued to MITSUBISHI ELECTRIC on May 26 for "Semiconductor device with MOS transistors each containing trenches and schottky junctions" (Japanese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,824, issued on May 26, was assigned to MITSUBISHI ELECTRIC Corp. (Tokyo). "Semiconductor device with MOS transistors each containing trenche... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on May 26 for "Device scaling by isolation enhancement" (Taiwanese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,825, issued on May 26, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Device scaling by isolation enhanceme... Read More

US Patent Issued to SAMSUNG ELECTRONICS on May 26 for "Semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,826, issued on May 26, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device" was invented by Eui Bok ... Read More

US Patent Issued to Intel on May 26 for "Trim patterning for forming angled transistors" (Oregon, California Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,827, issued on May 26, was assigned to Intel Corp. (Santa Clara, Calif.). "Trim patterning for forming angled transistors" was invented by A... Read More

US Patent Issued to International Business Machines on May 26 for "Stacked FET structures with different gate dielectric compositions or thicknesses" (New York Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,828, issued on May 26, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Stacked FET structures with different gate die... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 26 for "Buffer epitaxial region in semiconductor devices and manufacturing method of the same" (Taiwanese Inventor)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,829, issued on May 26, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Buffer epitaxial region in semico... Read More

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