US Patent Issued to POWER INTEGRATIONS on May 26 for "Vertical field effect transistor device and method of fabrication" (New York Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,821, issued on May 26, was assigned to POWER INTEGRATIONS INC. (San Jose, Calif.).

"Vertical field effect transistor device and method of fabrication" was invented by James R. Shealy (Ithaca, N.Y.) and Richard J. Brown (Ithaca, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method and vertical FET device fabricated in GaN or other suitable material. The device has a selective area implant region comprising an activated impurity configured from a bottom portion of a recessed regions, and substantially free from ion implant damage by using an annealing process. A p-type gate region is configured from the selective area implant region, and each o...