US Patent Issued to MITSUBISHI ELECTRIC on May 26 for "Semiconductor device with MOS transistors each containing trenches and schottky junctions" (Japanese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,824, issued on May 26, was assigned to MITSUBISHI ELECTRIC Corp. (Tokyo).

"Semiconductor device with MOS transistors each containing trenches and schottky junctions" was invented by Kotaro Kawahara (Tokyo) and Shiro Hino (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device according to the present disclosure includes a sense source electrode provided separately from a source electrode, and diodes. The diodes are provided between the sense source electrode and a drift layer. A turn-on voltage of each diode is lower than an operating voltage of a p-n diode formed of a sense well region and the drift layer or of a dummy sense wel...