ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,825, issued on May 26, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Device scaling by isolation enhancement" was invented by Jia-Chuan You (Hsinchu, Taiwan), Chia-Hao Chang (Hsinchu, Taiwan), Kuo-Cheng Chiang (Hsinchu, Taiwan), Chih-Hao Wang (Hsinchu, Taiwan), Sheng-Tsung Wang (Hsinchu, Taiwan), Chun-Yuan Chen (Hsinchu, Taiwan), Li-Zhen Yu (Hsinchu, Taiwan), Lin-Yu Huang (Hsinchu, Taiwan) and Huan-Chieh Su (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a gate electrode and a gate dielectric surrounding the gate electrode. The gate electrode surrounds a nanostructure. The nanostruct...