US Patent Issued to CERACOMP on April 21 for "Piezoelectric single crystal-polycrystalline ceramic composite, preparation method therefor, and piezoelectric and dielectric application components using same" (South Korean Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,746, issued on April 21, was assigned to CERACOMP Co. LTD. (Asan-si, South Korea). "Piezoelectric single crystal-polycrystalline ceramic c... Read More

US Patent Issued to SAMSUNG ELECTRONICS on April 21 for "Magnetic tunneling junction device, memory device including the same, and method of manufacturing the magnetic tunneling junction device" (South Korean Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,747, issued on April 21, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Magnetic tunneling junction device, mem... Read More

US Patent Issued to International Business Machines on April 21 for "Selective encapsulation for metal electrodes of embedded memory devices" (New York Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,748, issued on April 21, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Selective encapsulation for metal electrod... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on April 21 for "Method of forming a resistive memory device with ultra-thin barrier layer" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,749, issued on April 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Method of forming a resistive mem... Read More

US Patent Issued to International Business Machines on April 21 for "Bridge cell phase change memory" (New York Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,750, issued on April 21, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Bridge cell phase change memory" was inven... Read More

US Patent Issued to International Business Machines on April 21 for "Lateral phase change memory cell" (New York Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,751, issued on April 21, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Lateral phase change memory cell" was inve... Read More

US Patent Issued to TetraMem on April 21 for "Resistive random-access memory devices with a via device structure" (California Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,752, issued on April 21, was assigned to TetraMem Inc. (San Jose, Calif.). "Resistive random-access memory devices with a via device struc... Read More

US Patent Issued to International Business Machines on April 21 for "Stacked resistive random-access memory cross-point cell" (New York Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,753, issued on April 21, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Stacked resistive random-access memory cro... Read More

US Patent Issued to SAMSUNG ELECTRONICS on April 21 for "Chalcogenide-based material, and switching device and memory device that include the same" (South Korean Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,754, issued on April 21, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Chalcogenide-based material, and switch... Read More

US Patent Issued to ENKRIS SEMICONDUCTOR on April 21 for "Semiconductor structure and method for manufacturing semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,755, issued on April 21, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China). "Semiconductor structure and method for manufacturing ... Read More

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