US Patent Issued to TetraMem on April 21 for "Resistive random-access memory devices with a via device structure" (California Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,752, issued on April 21, was assigned to TetraMem Inc. (San Jose, Calif.).

"Resistive random-access memory devices with a via device structure" was invented by Minxian Zhang (Newark, Calif.), Mingche Wu (Newark, Calif.) and Ning Ge (Newark, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to resistive random-access memory (RRAM) devices. A method for fabricating an RRAM device includes: fabricating a first bottom electrode and a second bottom electrode on a substrate; fabricating a first isolation layer on the substrate, the first bottom electrode, and the second bottom electrode; fabricating a via in the first i...