US Patent Issued to SAMSUNG ELECTRONICS on April 21 for "Chalcogenide-based material, and switching device and memory device that include the same" (South Korean Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,754, issued on April 21, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Chalcogenide-based material, and switching device and memory device that include the same" was invented by Kiyeon Yang (Seoul, South Korea), Segab Kwon (Seoul, South Korea), Hajun Sung (Hwaseong-si, South Korea), Dongho Ahn (Hwaseong-si, South Korea) and Changseung Lee (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a chalcogenide-based material, and a switching element and a memory device that include the same. The chalcogenide-based material includes: a chalcogenide material and a dopant. The chalcogenide material...