US Patent Issued to Taiwan Semiconductor Manufacturing on April 21 for "Method of forming a resistive memory device with ultra-thin barrier layer" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,749, issued on April 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method of forming a resistive memory device with ultra-thin barrier layer" was invented by Hsia-Wei Chen (Taipei City, Taiwan), Chih-Hsiang Chang (Taichung City, Taiwan), Yu-Wen Liao (New Taipei City, Taiwan) and Wen-Ting Chu (Kaohsiung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A resistive memory device includes an ultrathin barrier layer disposed between the bottom electrode and the bottom electric contact to the memory device. The ultrathin barrier layer may reduce the overall step height of the resistive memory elements by 1...