US Patent Issued to Samsung Electronics on May 5 for "Integration scheme for fabricating high precision, low capacitor with unlanded via" (Texas Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,005, issued on May 5, was assigned to Samsung Electronics Co. Ltd (South Korea). "Integration scheme for fabricating high precision, low capa... Read More

US Patent Issued to SAMSUNG ELECTRONICS on May 5 for "Semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,006, issued on May 5, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor device" was invented by Sungil Par... Read More

US Patent Issued to ElectroPhotonic-IC on May 5 for "Type I-II transistor with a manufacturable ledge" (Canadian, American Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,007, issued on May 5, was assigned to ElectroPhotonic-IC Inc. (Kanata, Canada). "Type I-II transistor with a manufacturable ledge" was invent... Read More

US Patent Issued to Northwestern University on May 5 for "III-Nitride/gallium oxide based high electron mobility transistors" (Illinois Inventor)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,008, issued on May 5, was assigned to Northwestern University (Evanston, Ill.). "III-Nitride/gallium oxide based high electron mobility trans... Read More

US Patent Issued to CSMC TECHNOLOGIES FAB2, SOUTHEAST UNIVERSITY on May 5 for "DMOS device having junction field plate and manufacturing method therefor" (Chinese Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,009, issued on May 5, was assigned to CSMC TECHNOLOGIES FAB2 Co. LTD. (Wuxi, China) and SOUTHEAST UNIVERSITY (Nanjing, China). "DMOS device h... Read More

US Patent Issued to 1FINITY on May 5 for "Semiconductor device and method for manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,010, issued on May 5, was assigned to 1FINITY Inc. (Kawasaki, Japan). "Semiconductor device and method for manufacturing semiconductor device... Read More

US Patent Issued to NXP USA on May 5 for "Semiconductor device with diffusion barrier layer and method of fabrication therefor" (Arizona Inventor)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,011, issued on May 5, was assigned to NXP USA INC. (Austin, Texas). "Semiconductor device with diffusion barrier layer and method of fabricat... Read More

US Patent Issued to The Hong Kong University of Science and Technology on May 5 for "Normally-off p -GaN gate double channel HEMT and the manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,012, issued on May 5, was assigned to The Hong Kong University of Science and Technology (Hong Kong). "Normally-off p -GaN gate double channe... Read More

US Patent Issued to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on May 5 for "Folded channel gallium nitride based field-effect transistor and method of manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,013, issued on May 5, was assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing). "Folded channel gallium nitride b... Read More

US Patent Issued to Monolithic 3D on May 5 for "3D semiconductor device and structure with metal layers and a power delivery path" (Israeli Inventor)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,014, issued on May 5, was assigned to Monolithic 3D Inc. (Allen, Texas). "3D semiconductor device and structure with metal layers and a power... Read More

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