US Patent Issued to SiCrystal on May 12 for "Monocrystalline SiC substrates having an asymmetrical geometry and method of producing same" (Japanese, German Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,388, issued on May 12, was assigned to SiCrystal GmbH (Nuremberg, Germany). "Monocrystalline SiC substrates having an asymmetrical geometry ... Read More

US Patent Issued to International Business Machines on May 12 for "Nanosheet FET with controlled overlay mark" (New York Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,389, issued on May 12, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Nanosheet FET with controlled overlay mark" wa... Read More

US Patent Issued to International Business Machines on May 12 for "Nanosheet stacks with dielectric isolation layers" (New York Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,390, issued on May 12, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Nanosheet stacks with dielectric isolation lay... Read More

US Patent Issued to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on May 12 for "Method for manufacturing semiconductor and semiconductor" (Chinese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,391, issued on May 12, was assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing). "Method for manufacturing semic... Read More

US Patent Issued to DENSO, TOYOTA JIDOSHA, MIRISE Technologies on May 12 for "Switching element" (Japanese Inventor)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,392, issued on May 12, was assigned to DENSO Corp. (Kariya-city, Japan), TOYOTA JIDOSHA K.K. (Toyota, Japan) and MIRISE Technologies Corp. (N... Read More

US Patent Issued to FUJI ELECTRIC on May 12 for "Silicon carbide semiconductor device and method for manufacturing the same" (Japanese Inventor)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,394, issued on May 12, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan). "Silicon carbide semiconductor device and method for manufa... Read More

US Patent Issued to Sumitomo Electric Industries on May 12 for "Silicon carbide substrate and method of manufacturing silicon carbide substrate" (Japanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,396, issued on May 12, was assigned to Sumitomo Electric Industries Ltd. (Osaka, Japan). "Silicon carbide substrate and method of manufactur... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 12 for "Semiconductor structure and method of manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,398, issued on May 12, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor structure and metho... Read More

US Patent Issued to ASM IP Holding on May 12 for "Methods and systems for forming a layer comprising a group 13 element on a substrate" (Finnish, Chinese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,399, issued on May 12, was assigned to ASM IP Holding B.V. (Almere, Netherlands). "Methods and systems for forming a layer comprising a grou... Read More

US Patent Issued to Applied Materials on May 12 for "Seam free titanium nitride gapfill" (California Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,400, issued on May 12, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Seam free titanium nitride gapfill" was invented by Ra... Read More

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