US Patent Issued to ASM IP Holding on May 12 for "Methods and systems for forming a layer comprising a group 13 element on a substrate" (Finnish, Chinese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,399, issued on May 12, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Methods and systems for forming a layer comprising a group 13 element on a substrate" was invented by Charles Dezelah (Helsinki), Petro Deminskyi (Helsinki) and Qi Xie (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are methods and systems for depositing layers comprising a Group 13 element on a surface of a substrate via contacting the substrate with at least a vapor-phase first precursor and a vapor-phase second precursor comprising an alkyl halide. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND...