US Patent Issued to Sumitomo Electric Industries on May 12 for "Silicon carbide substrate and method of manufacturing silicon carbide substrate" (Japanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,396, issued on May 12, was assigned to Sumitomo Electric Industries Ltd. (Osaka, Japan).

"Silicon carbide substrate and method of manufacturing silicon carbide substrate" was invented by Kyoko Okita (Osaka, Japan), Tsubasa Honke (Osaka, Japan) and Shunsaku Ueta (Osaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide substrate includes a first main surface, a second main surface, a threading screw dislocation, and a blind scratch. The second main surface is located opposite to the first main surface. The threading screw dislocation extends to each of the first main surface and the second main surface. The blind scratch is expose...