US Patent Issued to Taiwan Semiconductor Manufacturing on May 12 for "Semiconductor manufacturing" (Taiwanese Inventor)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,378, issued on May 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor manufacturing" was inve... Read More

US Patent Issued to BOE TECHNOLOGY GROUP on May 12 for "Thin film transistor and display panel" (Chinese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,379, issued on May 12, was assigned to BOE TECHNOLOGY GROUP Co. LTD. (Beijing). "Thin film transistor and display panel" was invented by Don... Read More

US Patent Issued to LG Display on May 12 for "Thin film transistor and display apparatus comprising the same" (South Korean Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,380, issued on May 12, was assigned to LG Display Co. Ltd. (Seoul, South Korea). "Thin film transistor and display apparatus comprising the ... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on May 12 for "Wakeup-free ferroelectric memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,381, issued on May 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Wakeup-free ferroelectric memory devi... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on May 12 for "Interfacial dual passivation layer for a ferroelectric device and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,382, issued on May 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Interfacial dual passivation layer fo... Read More

US Patent Issued to Intel on May 12 for "Transistors having stacked 2D material channel layers and heterogeneous 2D material contacts layers epitaxial to the 2D material channel layers" (Oregon Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,383, issued on May 12, was assigned to Intel Corp. (Santa Clara, Calif.). "Transistors having stacked 2D material channel layers and heterog... Read More

US Patent Issued to QUALCOMM on May 12 for "Enhanced-shaped extension region(s) for gate-all-around (GAA) field effect transistor (FET) device, and related fabrication methods" (California, North Carolina Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,384, issued on May 12, was assigned to QUALCOMM Inc. (San Diego). "Enhanced-shaped extension region(s) for gate-all-around (GAA) field effec... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on May 12 for "Semiconductor device and methods of formation" (Taiwanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,385, issued on May 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor device and methods of f... Read More

US Patent Issued to FUJI ELECTRIC on May 12 for "Semiconductor device and manufacturing method of semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,386, issued on May 12, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan). "Semiconductor device and manufacturing method of semicondu... Read More

US Patent Issued to UNITED MICROELECTRONICS on May 12 for "Semiconductor device and method for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,387, issued on May 12, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Semiconductor device and method for fabricati... Read More

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